? GAP05SLT80-220 sep 2014 http://www.genesicsemi.com/commercia l-sic/sic-schottky-rectifiers page 1 of 2 ? ???????????????????????? ??????????????????? ?????????????????? ? silicon carbide power schottky diode features ? 8000 v silicon carbide schottky rectifier ? 175 c maximum operating temperature ? positive temperature coefficient of v f ? extremely fast switching speeds ? superior figure of merit q c /i f advantages ? improved circuit efficienc y (lower overall cost) ? low switching losses ? ease of paralleling devices without thermal runaway ? smaller heat sink requirements ? low reverse recovery current ? low device capacitance ? low reverse leakage current at operating temperature electrical specifications absolute maximum ratings parameter symbol conditions values unit repetitive peak reverse voltage v rrm 8000 v continuous forward current i f 50 ma rms forward current i f ( rms ) 87 ma power dissipation p tot t c = 25 c 0.2 w operating and storage temperature t j , t stg -55 to 175 c electrical characteristics parameter symbol conditions values unit min. typ. max. diode forward voltage v f i f = 50 ma, t j = 25 c 4.6 v i f = 50 ma, t j = 175 c 12 reverse current i r v r = 8000 v, t j = 25 c 3.8 a v r = 8000 v, t j = 125 c 5.3 total capacitance c v r = 1 v, f = 1 mhz, t j = 25 c 25 pf v r = 400 v, f = 1 mhz, t j = 25 c 8 v r = 1000 v, f = 1 mhz, t j = 25 c 6 v rrm = 8000 v v f = 4.6 v i f = 50 ma q c = 8 nc a k
? GAP05SLT80-220 sep 2014 http://www.genesicsemi.com/commercia l-sic/sic-schottky-rectifiers page 2 of 2 ? ???????????????????????? ??????????????????? ?????????????????? ? figure 1: typical forward characteristics figure 2: typical reverse characteristics figure 3: typical junction capacitance vs reverse voltage characteristics revision history date revision comments supersedes 2014/09/15 1 initial release published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 genesic semiconductor, inc. reserves right to make changes to the product specificat ions and data in this document without noti ce. genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or i mplied to any intellectual property rights is granted by this document. unless otherwise expressly indicated, genesic products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic cont rol and weapons systems, nor in applications where their failure may result in death , personal injury and/or property damage.
? GAP05SLT80-220 sep 2014 http://www.genesicsemi.com/commerc ial-sic/sic-schottky-rectifiers page 1 of 1 ? spice model parameters this is a secure document. please copy this code from the spice model pdf file on our website ( http://www.genesicsemi.com/images/products_s ic/rectifiers/GAP05SLT80-220_spice.pdf ) into ltspice (version 4) software for simulation of the GAP05SLT80-220. * model of genesic semiconductor inc. * * $revision: 1.1 $ * $date: 15-sep-2014 $ * * genesic semiconductor inc. * 43670 trade center place ste. 155 * dulles, va 20166 * * copyright (c) 2014 genesic semiconductor inc. * all rights reserved * * these models are provided "as is, where is, and with no warranty * of any kind either expressed or implied, including but not limited * to any implied warranties of merchantability and fitness for a * particular purpose." * models accurate up to 2 times rated drain current. * * start of GAP05SLT80-220 spice model .subckt gap05slt80_220 anode kathode r1 anode int r=((temp-24)*0.81); temperature dependant resistor d1 int kathode gap05slt80_220_25c .model gap05slt80_220_25c d; model of GAP05SLT80-220 device at 25 c + is 14.067e-15 + n 1.3760 + rs 42.6 + ikf 157.39e-6 + eg 1.2 + xti -85 + cjo 21.838e-12 + m 0.258 + vj 3.198 + bv 9000 + ibv 1e-3 + tt 1.0000e-10 + vpk 8000 + iave 3e-2 + type sic_schottky + mfg genesic_semiconductor .ends * * end of GAP05SLT80-220 spice model
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